Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

Abstract

Atomically flat thin films of topological insulator Bi2Se3 have been grown on double-layer graphene formed on 6H-SiC(0001) substrate by molecular beam epitaxy. By a combined study of reflection high energy electron diffraction and scanning tunneling microscopy, we identified the Se-rich condition and temperature criterion for layer-by-layer growth of epitaxial Bi2Se3 films. The as-grown films without doping exhibit a low defect density of 1.0\pm 0.2x1011/cm2, and become a bulk insulator at a thickness of 10 quintuple layers, as revealed by in situ angle resolved photoemission spectroscopy measurement.

13 pages, 3 figures

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• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Topological Surface States Protected From Backscattering by Chiral Spin Texture

Cited by in corpus (53)

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• Growth of quantum well films of topological insulator Bi2Se3 on insulating substrate
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