High density carriers at a strongly coupled graphene-topological insulator interface

Abstract

We report on a strongly coupled bilayer graphene (BLG) - \bise\ device with a junction resistance of less than 1.5 k$\Omega \mu$m${}^2$. This device exhibits unique behavior at the interface, which cannot be attributed to either material in absence of the other. We observe quantum oscillations in the magnetoresistance of the junction, indicating the presence of well-resolved Landau levels due to hole carriers of unknown origin with a very large Fermi surface. These carriers, found only at the interface, could conceivably arise due to significant hole doping of the bilayer graphene with charge transfer on the order of 2$\times$10${}^{13}$ cm${}^{-2}$, or due to twist angle dependent mini-band transport.

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Cited by in corpus (10)

• Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
• WS2 Monolayers Coupled to Hyperbolic Metamaterial Nanoantennas: Broad Implications for Light-Matter-Interaction Applications
• Heterostructures of graphene and topological insulators Bi${}_2$Se${}_3$, Bi${}_2$Te${}_3$, and Sb${}_2$Te${}_3$
• Single and bilayer graphene on the topological insulator Bi${}_2$Se${}_3$: Electronic and spin-orbit properties from first principles
• Superconductivity in twisted Graphene $\mathrm{NbS}{\mathrm{e}}_2$ heterostructures
• Twist-angle dependent proximity induced spin-orbit coupling in graphene/topological insulator heterostructures
• Magic angle conditions for twisted 3D topological insulators
• Proximity-Induced Spin-Orbit Coupling in Graphene-Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ Heterostructures
• Crystallographic orientation errors in mechanical exfoliation
• Exploring Structural and Electronic Properties of Topological Insulator/Graphene Nano-heterostructures