Superconductivity in twisted Graphene $\mathrm{NbS}{\mathrm{e}}_2$ heterostructures

Abstract

We study the low-energy electronic structure of heterostructures formed by one sheet of graphene placed on a monolayer of $\mathrm{NbS}{\mathrm{e}}_2$. We build a continuous low-energy effective model that takes into account the presence of a twist angle between graphene and $\mathrm{NbS}{\mathrm{e}}_2$, and of spin-orbit coupling and superconducting pairing in $\mathrm{NbS}{\mathrm{e}}_2$. We obtain the parameters entering the continuous model via ab-initio calculations. We show that despite the large mismatch between the graphene's and $\mathrm{NbS}{\mathrm{e}}_2$'s lattice constants, due to the large size of the $\mathrm{NbS}{\mathrm{e}}_2$'s Fermi pockets, there is a large range of values of twist angles for which a superconducting pairing can be induced into the graphene layer. In addition, we show that the superconducting gap induced into the graphene is extremely robust to an external in-plane magnetic field. Our results show that the size of the induced superconducting gap, and its robustness against in-plane magnetic fields, can be significantly tuned by varying the twist angle.

arXiv commentPublished Version

References in corpus (41)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• The electronic properties of graphene
• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Atomically thin MoS2: A new direct-gap semiconductor
• Van der Waals heterostructures
• Magic-angle graphene superlattices: a new platform for unconventional superconductivity
• Advanced capabilities for materials modelling with Quantum ESPRESSO
• Boron nitride substrates for high-quality graphene electronics
• Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
• Electronic transport in two dimensional graphene
• Moire bands in twisted double-layer graphene
• Tuning superconductivity in twisted bilayer graphene
• Graphene bilayer with a twist: electronic structure
• Evidence of Ising pairing in superconducting NbSe${}_2$ atomic layers
• Two Dimensional Ising Superconductivity in Gated MoS${}_2$
• Strongly enhanced charge-density-wave order in monolayer NbSe${}_2$
• Characterization of collective ground states in single-layer NbSe2
• Band structure of MoS_2, MoSe_2, and alpha-MoTe_2: Angle-resolved photoelectron spectroscopy and ab-initio calculations
• Superconductivity protected by spin-valley locking in ion-gated MoS2
• Commensuration and Interlayer Coherence in Twisted Bilayer Graphene
• Strong interface-induced spin-orbit coupling in graphene on WS2
• Tuning Ising superconductivity with layer and spin-orbit coupling in two-dimensional transition-metal dichalcogenides
• Enhanced superconductivity in atomically thin TaS2
• Trivial and inverted Dirac bands, and emergence of quantum spin Hall states in graphene on transition-metal dichalcogenides
• Topologically Protected Helical States in Minimally Twisted Bilayer Graphene
• Quantum Spin Hall Effect in Two-dimensional Crystals of Transition Metal Dichalcogenides
• Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2
• Graphene-based topological insulator with an intrinsic bulk band gap above room temperature
• Unusual suppression of the superconducting energy gap and critical temperature in atomically thin NbSe2
• Proximity effect in graphene-topological insulator heterostructures
• Spectroscopy of bulk and few-layer superconducting NbSe${}_2$ with van der Waals tunnel junctions
• Effective medium theory for disordered two-dimensional graphene
• Interlayer coupling in rotationally faulted multilayer graphenes
• Giant Edelstein effect in Topological-Insulator--Graphene heterostructures
• Specific-heat measurements of superconducting NbS2 single crystal in an external magnetic field: Study on the energy gap structure
• Local and Global Screening Properties of Graphene Revealed through Landau Level Spectroscopy
• Gate-Tunable Tunneling Resistance in Graphene/Topological Insulator Vertical Junctions
• Ground state of graphene heterostructures in the presence of random charged impurities
• Tunneling into the vortex state of NbSe${}_2$ with van der Waals junctions
• Tunneling in graphene-topological insulator hybrid devices
• High density carriers at a strongly coupled graphene-topological insulator interface

Cited by in corpus (14)

• Twistronics: A turning point in 2D quantum materials
• Quantum Metric and Correlated States in Two-dimensional Systems
• Majorana and parafermion corner states from two coupled sheets of bilayer graphene
• Twistronics in graphene-based van der Waals structures
• Van der Waals heterostructures with spin-orbit coupling
• Correlation-induced valley topology in buckled graphene superlattices
• Proximity induced spin-orbit splitting in graphene nanoribbons on transition metal dichalcogenides
• Twisted Bogoliubov quasiparticles in the superconducting NbSe${}_2$ monolayer on graphene
• High magnetic field stability in a planar graphene-NbSe${}_2$ SQUID
• Local characterization and engineering of proximitized correlated states in graphene-NbSe${}_2$ vertical heterostructures
• Kondo Effect in Defect-bound Quantum Dots Coupled to NbSe${}_2$
• Tuning monolayer superconductivity in twisted NbSe${}_2$ graphene heterostructures
• Superconducting Berry Curvature Dipole
• Resonant interlayer coupling in NbSe${}_2$-graphite epitaxial moir{é} superlattices