Electronic structure, spin-orbit coupling, and interlayer interaction in bulk MoS2 and WS2

Abstract

We present in-depth measurements of the electronic band structure of the transition-metal dichalcogenides (TMDs) MoS2 and WS2 using angle-resolved photoemission spectroscopy, with focus on the energy splittings in their valence bands at the K point of the Brillouin zone. Experimental results are interpreted in terms of our parallel first-principles computations. We find that interlayer interaction only weakly contributes to the splitting in bulk WS2, resolving previous debates on its relative strength. We additionally find that across a range of TMDs, the band gap generally decreases with increasing magnitude of the valence-band splitting, molecular mass, or ratio of the out-of-plane to in-plane lattice constant. Our results provide an important reference for future studies of electronic properties of MoS2 and WS2 and their applications in spintronics and valleytronics devices.

6 pages, 4 figures

References in corpus (2)

• Valley polarization in MoS2 monolayers by optical pumping
• Quantitative Determination of the Band-Gap of WS2 with Ambipolar Ionic Liquid-Gated Transistors

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• Spin splitting and strain in epitaxial monolayer WSe${}_2$ on graphene
• Layer degree of freedom for excitons in transition metal dichalcogenides
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• Superconductivity in twisted Graphene $\mathrm{NbS}{\mathrm{e}}_2$ heterostructures
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• Unveiling the multi-level structure of midgap states in Sb-doped MoX${}_2$ (X = S, Se, Te) monolayers
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• Strain-induced tuning of optical properties of layered Mo$S_2$
• Nature of Valance Band Splitting on Multilayer MoS2
• Designer three-dimensional electronic bands in asymmetric transition metal dichalcogenide heterostructures
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