Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition

Abstract

Combining MoS${}_2$ monolayers to form multilayers allows to access new functionalities. In this work, we examine the correlation between the stacking order and the interlayer coupling of valence states in MoS${}_2$ homobilayer samples grown by chemical vapor deposition (CVD) and artificially stacked bilayers from CVD monolayers. We show that hole delocalization over the bilayer is allowed in 2H stacking and results in strong interlayer exciton absorption and also in a larger A-B exciton separation as compared to 3R bilayers, where both holes and electrons are confined to the individual layers. Comparing 2H and 3R reflectivity spectra allows to extract an interlayer coupling energy of about $t_{\perp }=49$ meV. Obtaining very similar results for as-grown and artificially stacked bilayers is promising for assembling large area van der Waals structures with CVD material, using interlayer exciton absorption and A-B exciton separation as indicators for interlayer coupling. Beyond DFT calculations including excitonic effects confirm signatures of efficient interlayer coupling for 2H stacking in agreement with our experiments.

arXiv comment10 pages including supplement, 3 + 4 figures

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