One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides
arXiv:2205.04751 · doi:10.1002/adma.202205226
Abstract
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to the central transition metal (Mo) atoms. The formation of these two-dimensional semiconductor monolayers takes place upon the thermodynamic equilibrium-driven exchange of the bottom Se atoms of the initially grown MoSe2 single crystals on gold foils with S atoms. The growth process is characterized by complementary experimental techniques including Raman and X-ray photoelectron spectroscopy and the growth mechanisms are rationalized by first principle calculations. The remarkably high optical quality of the synthesized Janus monolayers is demonstrated by optical and magneto-optical measurements which reveal the strong exciton-phonon coupling and enable to obtain the exciton g-factor of -3.3.
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Cited by in corpus (4)
- Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
- Nonlinear Dispersion Relation and Out-of-Plane Second Harmonic Generation in MoSSe and WSSe Janus Monolayers
- Atomically-precise synthesis and simultaneous integration of 2D transition metal dichalcogenides enabled by nano-confinement
- Tunable resonant s-p mixing of excitons in van der Waals heterostructures