activity
20052023
most citedExcitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics

677 citations · 11.7k across the 112 of their papers we have counts for

collaborators

112 papers

cond-mat.mtrl-sci2023★ 7 cited

Biaxial strain tuning of exciton energy and polarization in monolayer WS2

G. Kourmoulakis, A. Michail, I. Paradisanos +8

We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of…

quant-ph2023★ 43 cited

Isotopic control of the boron-vacancy spin defect in hexagonal boron nitride

T. Clua-Provost, A. Durand, Z. Mu +12

We report on electron spin resonance (ESR) spectroscopy of boron-vacancy (V) centers hosted in isotopically-engineered hexagonal boron nitride (hBN) crystals. We first…

cond-mat.mtrl-sci2023★ 2 cited

Electron and hole doping of monolayer WSe2 induced by twisted ferroelectric hexagonal boron nitride

Jules Fraunié, Rayan Jamil, Richard Kantelberg +12

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity…

cond-mat.mes-hall2023★ 25 cited

Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction

Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos +13

Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Tran…

cond-mat.quant-gas2023

Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films

R. Aristegui, P. Lefebvre, C. Brimont +9

Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. T…

quant-ph2023★ 63 cited

Optically-active spin defects in few-layer thick hexagonal boron nitride

A. Durand, T. Clua-Provost, F. Fabre +11

Optically-active spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of two-dimensional quantum sensing units offering optimal proximity to t…