138 citations · 892 across the 27 of their papers we have counts for
27 papers
Alloy engineering of excitonic properties in TMD monolayers
Eirini Katsipoulaki, Adlen Smiri, Panagiotis Spiliotakis +12
We investigate monolayer MoSSe alloys across the full composition range using optical spectroscopy. We demonstrate continuous tuning of the optical gap over $\sim…
Highly Efficient Exciton Modulation in MoSe/PdSe Heterostructures
Petr Rozhin, Emma Contin, Danae Katrisioti +15
Controlling exciton recombination in atomically thin semiconductors is central to their optoelectronic functionality, as the competition between radiative and non-radiative decay c…
Valleytronics in 2D Materials Roadmap
Kyle L. Seyler, Giancarlo Soavi, Bent Weber +30
Valleytronics exploits non-equivalent energy extrema in the electronic band structure of crystalline solids -- the valley degree of freedom -- to encode, manipulate, and read out i…
2D Excitonics with Atomically Thin Lateral Heterostructures
S. Shradha, R. Rosati, H. Lamsaadi +18
Semiconducting transition metal dichalcogenides (TMDs), such as MoSe and WSe, exhibit unique optical and electronic properties. Vertical stacking of layers of one or more T…
Silicon nanoantennas for tailoring the optical properties of MoS2 monolayers
Danae Katrisioti, Peter R. Wiecha, Aurélien Cuche +11
Silicon-based dielectric nanoantennas provide an effective platform for engineering light-matter interactions in van der Waals semiconductors. Here, we demonstrate near-field coupl…
Two dimensional semiconductors: optical and electronic properties
Roberto Rosati, Ioannis Paradisanos, Ermin Malic +1
In the last decade atomically thin 2D materials have emerged as a perfect platform for studying and tuning light-matter interaction and electronic properties in nanostructures. The…
Valley Polarization-Electric Dipole Interference and Nonlinear Chiral Selection Rules in Monolayer WSe
Paul Herrmann, Sebastian Klimmer, Till Weickhardt +6
In monolayer transition metal dichalcogenides time-reversal symmetry, combined with space-inversion symmetry, defines the spin-valley degree of freedom. As such, engineering and co…
Biaxial strain tuning of exciton energy and polarization in monolayer WS2
G. Kourmoulakis, A. Michail, I. Paradisanos +8
We perform micro-photoluminescence and Raman experiments to examine the impact of biaxial tensile strain on the optical properties of WS2 monolayers. A strong shift on the order of…
Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction
Hassan Lamsaadi, Dorian Beret, Ioannis Paradisanos +13
Being able to control the neutral excitonic flux is a mandatory step for the development of future room-temperature two-dimensional excitonic devices. Semiconducting Monolayer Tran…
Electrostatic modulation of excitonic fluid in GaN/AlGaN quantum wells by deposition of few-layered graphene and nickel/gold films
R. Aristegui, P. Lefebvre, C. Brimont +9
Excitons hosted by GaN/(Al,Ga)N quantum wells (QWs) are spatially indirect due to the giant built-in electric field that separates electrons and holes along the growth direction. T…
Monolayer WS electro- and photo-luminescence enhancement by TFSI treatment
A. R. Cadore, B. L. T. Rosa, I. Paradisanos +14
Layered material heterostructures (LMHs) can be used to fabricate electroluminescent devices operating in the visible spectral region. A major advantage of LMH-light emitting diode…
Interface engineering of charge-transfer excitons in 2D lateral heterostructures
Roberto Rosati, Ioannis Paradisanos, Libai Huang +9
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer ex…
Probing the optical near-field interaction of Mie nanoresonators with atomically thin semiconductors
Ana Estrada-Real, Ioannis Paradisanos, Peter R. Wiecha +10
Optical Mie resonators based on silicon nanostructures allow tuning of light-matter-interaction with advanced design concepts based on CMOS compatible nanofabrication. Optically ac…
One pot chemical vapor deposition of high optical quality large area monolayer Janus transition metal dichalcogenides
Ziyang Gan, Ioannis Paradisanos, Ana Estrada-Real +13
We report one-pot chemical vapor deposition (CVD) growth of large-area Janus SeMoS monolayers, with the asymmetric top (Se) and bottom (S) chalcogen atomic planes with respect to t…
Exciton spectroscopy and diffusion in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
Dorian Beret, Ioannis Paradisanos, Ziyang Gan +17
Chemical vapor deposition (CVD) allows lateral edge epitaxy of transition metal dichalcogenide heterostructures with potential applications in optoelectronics. Critical for carrier…
Second harmonic generation control in twisted bilayers of transition metal dichalcogenides
Ioannis Paradisanos, Andres Manuel Saiz Raven, Thierry Amand +7
The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinemen…
Capacitively-coupled and inductively-coupled excitons in bilayer MoS
Lukas Sponfeldner, Nadine Leisgang, Shivangi Shree +10
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS. It is shown that the measured optical susceptibility revea…
Electrically tuneable nonequilibrium optical response of graphene
Eva A. A. Pogna, Andrea Tomadin, Osman Balci +9
The ability to tune the optical response of a material via electrostatic gating is crucial for optoelectronic applications, such as electro-optic modulators, saturable absorbers, o…
Interlayer exciton mediated second harmonic generation in bilayer MoS2
Shivangi Shree, Delphine Lagarde, Laurent Lombez +10
Second harmonic generation (SHG) is a non-linear optical process, where two photons coherently combine into one photon of twice their energy. Efficient SHG occurs for crystals with…
Low-loss integrated nanophotonic circuits with layered semiconductor materials
Tianyi Liu, Ioannis Paradisanos, Jijun He +13
Monolayer transition metal dichalcogenides with direct bandgaps are emerging candidates for microelectronics, nano-photonics, and optoelectronics. Transferred onto photonic integra…
Unveiling the optical emission channels of monolayer semiconductors coupled to silicon nanoantennas
Jean-Marie Poumirol, Ioannis Paradisanos, Shivangi Shree +13
Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability…
Efficient phonon cascades in hot photoluminescence of WSe monolayers
Ioannis Paradisanos, Gang Wang, Evgeny M. Alexeev +5
Energy relaxation of photo-excited charge carriers is of significant fundamental interest and crucial for the performance of monolayer (1L) transition metal dichaclogenides (TMDs)…
Guide to optical spectroscopy of layered semiconductors
Shivangi Shree, Ioannis Paradisanos, Xavier Marie +2
In this technical review we give an introduction to optical spectroscopy for layered materials as a powerful, non-invasive tool to access details of the electronic band structure a…
Confinement of long-lived interlayer excitons in WS/WSe heterostructures
Alejandro R. -P. Montblanch, Dhiren M. Kara, Ioannis Paradisanos +13
Interlayer excitons in layered materials constitute a novel platform to study many-body phenomena arising from long-range interactions between quantum particles. The ability to loc…