Interface engineering of charge-transfer excitons in 2D lateral heterostructures
arXiv:2302.02617 · doi:10.1038/s41467-023-37889-9
Abstract
The existence of bound charge transfer (CT) excitons at the interface of monolayer lateral heterojunctions has been debated in literature, but contrary to the case of interlayer excitons in vertical heterostructure their observation still has to be confirmed. Here, we present a microscopic study investigating signatures of bound CT excitons in photoluminescence spectra at the interface of hBN-encapsulated lateral MoSe-WSe heterostructures. Based on a fully microscopic and material-specific theory, we reveal the many-particle processes behind the formation of CT excitons and how they can be tuned via interface- and dielectric engineering. For junction widths smaller than the Coulomb-induced Bohr radius we predict the appearance of a low-energy CT exciton. The theoretical prediction is compared with experimental low-temperature photoluminescence measurements showing emission in the bound CT excitons energy range. Our joint theory-experiment study presents a significant step towards a microscopic understanding of optical properties of technologically promising 2D lateral heterostructures.
arXiv comment10 pagers, 4 figures
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Cited by in corpus (7)
- Kapitza-resistance-like exciton dynamics in atomically flat MoSe-WSe lateral heterojunction
- Probing excitons with time-resolved momentum microscopy
- Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure
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- Quantum Confined Luminescence in Two dimensions
- Two dimensional semiconductors: optical and electronic properties
- Trion Engineered Multimodal Transistors in Two dimensional Bilayer Semiconductor Lateral Heterostructures