Dark-exciton based strain sensing in transition metal dichalcogenides

Abstract

The trend towards ever smaller high-performance devices in modern technology requires novel materials with new functionalities. The recent emergence of atomically thin two-dimensional (2D) materials has opened up possibilities for the design of ultra-thin and flexible nanoelectronic devices. As truly 2D materials, they exhibit an optimal surface-to-volume ratio, which results in an extremely high sensitivity to external changes. This makes these materials optimal candidates for sensing applications. Here, we exploit the remarkably diverse exciton landscape in monolayer transition metal dichalcogenides to propose a novel dark-exciton-based concept for ultra sensitive strain sensors. We demonstrate that the dark-bright-exciton separation can be controlled by strain, which has a crucial impact on the activation of dark excitonic states. This results in a pronounced intensity change of dark excitons in photoluminescence spectra, when only 0.05 $\%$ strain is applied. The predicted extremely high optical gauge factors of up to 8000 are promising for the design of optical strain sensors.

arXiv comment6 pages, 4 figures

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Cited by in corpus (6)

• Interface engineering of charge-transfer excitons in 2D lateral heterostructures
• High Density, Localized Quantum Emitters in Strained 2D Semiconductors
• Exploration of the bright and dark exciton landscape and fine structure of MoS${}_2$ (using G${}_0$W${}_0$-BSE)
• Visualization of dark excitons in semiconductor monolayers for high-sensitivity strain sensing
• Tensile strain induced brightening of momentum forbidden dark exciton in WS${}_2$
• Photoluminescence kinetics of dark and bright excitons in atomically thin MoS${}_2$