High Density, Localized Quantum Emitters in Strained 2D Semiconductors
arXiv:2204.00397 · doi:10.1021/acsnano.2c02974
Abstract
Two-dimensional chalcogenide semiconductors have recently emerged as a host material for quantum emitters of single photons. While several reports on defect and strain-induced single photon emission from 2D chalcogenides exist, a bottom-up, lithography-free approach to producing a high density of emitters remains elusive. Further, the physical properties of quantum emission in the case of strained 2D semiconductors are far from being understood. Here, we demonstrate a bottom-up, scalable, and lithography-free approach to creating large areas of localized emitters with high density (~150 emitters/um2) in a WSe2 monolayer. We induce strain inside the WSe2 monolayer with high spatial density by conformally placing the WSe2 monolayer over a uniform array of Pt nanoparticles with a size of 10 nm. Cryogenic, time-resolved, and gate-tunable luminescence measurements combined with near-field luminescence spectroscopy suggest the formation of localized states in strained regions that emit single photons with a high spatial density. Our approach of using a metal nanoparticle array to generate a high density of strained quantum emitters opens a new path towards scalable, tunable, and versatile quantum light sources.
arXiv comment45 pages, 20 figures (5 main figures, 15 supporting figures)
References in corpus (22)
- Graphene Photonics and Optoelectronics
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Two-Dimensional Material Nanophotonics
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Electronic and optical properties of strained graphene and other strained 2D materials: a review
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Magnetic brightening and control of dark excitons in monolayer WSe2
- Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
- Engineered Quantum Dot Single Photon Sources
- Strain-induced spatial and spectral isolation of quantum emitters in mono- and bi-layer WSe2
- Radiative control of dark excitons at room temperature by nano-optical antenna-tip induced Purcell effect
- Imaging strain-localized exciton states in nanoscale bubbles in monolayer WSe2 at room temperature
- Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
- Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride
- Emerging Photoluminescence from the Dark-Exciton Phonon Replica in Monolayer WSe2
- Site-Controlled Telecom Single-Photon Emitters in Atomically-thin MoTe2
- Dark-exciton based strain sensing in transition metal dichalcogenides
- Cascaded exciton emission of an individual strain-induced quantum dot
Cited by in corpus (6)
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- Direct Nano-Imaging of Light-Matter Interactions in Nanoscale Excitonic Emitters
- Bound excitons and bandgap engineering in violet phosphorus
- Quantum Confined Luminescence in Two dimensions
- Wetting and Strain Engineering of 2D Materials on Nanopatterned Substrates
- Nanoparticle Stressor-Induced Single-photon Sources in Monolayer WS Emitting into a Narrowband Visible Spectral Range