Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

Abstract

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funneling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. These arrays of non-classical light emitters open new vistas for two-dimensional semiconductors in cavity quantum electrodynamics and integrated on-chip quantum photonics.

10 pages including supplemental information, 9 figures

References in corpus (4)

• Atomically thin quantum light emitting diodes
• Magneto-optics in transition metal diselenide monolayers
• Cascaded emission of single photons from the biexciton in monolayered WSe2
• Spin-flip processes and radiative decay of dark intravalley excitons in transition metal dichalcogenide monolayers

Cited by in corpus (150)

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