Color Centers in Hexagonal Boron Nitride
arXiv:2409.08460 · doi:10.3390/nano13162344
Abstract
Atomically thin two-dimensional (2D) hexagonal boron nitride (hBN) has emerged as an essential material for the encapsulation layer in van der Waals heterostructures and efficient deep ultra-violet optoelectronics. This is primarily due to its remarkable physical properties and ultrawide bandgap (close to 6 eV, and even larger in some cases) properties. Color centers in hBN refer to intrinsic vacancies and extrinsic impurities within the 2D crystal lattice, which result in distinct optical properties in the ultraviolet (UV) to near-infrared (IR) range. Furthermore, each color center in hBN exhibits a unique emission spectrum and possesses various spin properties. These characteristics open up possibilities for the development of next-generation optoelectronics and quantum information applications, including room-temperature single-photon sources and quantum sensors. Here, we provide a comprehensive overview of the atomic configuration, optical and quantum properties, and different techniques employed for the formation of color centers in hBN. A deep understanding of color centers in hBN allows for advances in the development of next-generation UV optoelectronic applications, solid-state quantum technologies, and nanophotonics by harnessing the exceptional capabilities offered by hBN color centers.
References in corpus (27)
- Electric Field Effect in Atomically Thin Carbon Films
- Atomically thin MoS2: A new direct-gap semiconductor
- Boron nitride substrates for high-quality graphene electronics
- Hexagonal boron nitride is an indirect bandgap semiconductor
- Large-scale quantum-emitter arrays in atomically thin semiconductors
- Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal
- Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
- Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
- Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
- Room-temperature optically detected magnetic resonance of single defects in hexagonal boron nitride
- Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated cathodoluminescence, photoluminescence, and strain mapping
- Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
- Position-controlled quantum emitters with reproducible emission wavelength in hexagonal boron nitride
- Photonic Crystal Cavities from Hexagonal Boron Nitride
- Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature
- Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitride
- Space-compatible cavity-enhanced single-photon generation with hexagonal boron nitride
- Fabrication and deterministic transfer of high quality quantum emitter in hexagonal boron nitride
- Scalable and Deterministic Fabrication of Quantum Emitter Arrays from Hexagonal Boron Nitride
- Band gap measurements of monolayer h-BN and insights into carbon-related point defects
- Blue-Light-Emitting Color Centers in High-Quality Hexagonal Boron Nitride
- Atomic Localization of Quantum Emitters in Multilayer Hexagonal Boron Nitride
- Single Photon Emitters in Boron Nitride: More Than a Supplementary Material
- Origin of nonclassical light emission from defects in multi-layer hexagonal boron nitride
- Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies
- Cathodoluminescence monitoring of quantum emitter activation in hexagonal boron nitride
- Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes