Origin of nonclassical light emission from defects in multi-layer hexagonal boron nitride
arXiv:1904.10892 · doi:10.1515/nanoph-2019-0123
Abstract
In recent years, mono-layers and multi-layers of hexagonal boron nitride (hBN) have been demonstrated as host materials for localized atomic defects that can be used as emitters for ultra-bright, non-classical light. The origin of the emission, however, is still subject to debate. Based on measurements of photon statistics, lifetime and polarization on selected emitters we find that these atomic defects do not act as pure single photon emitters. Our results strongly and consistently indicate that each zero phonon line of individual emitters is comprised of two independent electronic transitions. These results give new insights into the nature of the observed emission and hint at a double defect nature of emitters in multi-layer hBN.
References in corpus (13)
- The nitrogen-vacancy colour centre in diamond
- Hexagonal boron nitride is an indirect bandgap semiconductor
- Tunable and high purity room-temperature single photon emission from atomic defects in hexagonal boron nitride
- Single photon emission from silicon-vacancy centres in CVD-nano-diamonds on iridium
- Atomically thin quantum light emitting diodes
- Temperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride
- Color centers in hexagonal boron nitride monolayers: A group theory and ab-initio analysis
- Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
- Optical Signatures of Quantum Emitters in Suspended Hexagonal Boron Nitride
- Efficient single photon emission from a high-purity hexagonal boron nitride crystal
- Defect states in hexagonal boron nitride: Assignments of observed properties and prediction of properties relevant to quantum computation
- Narrowband quantum emitters over large spectral range with Fourier-limited linewidth in hexagonal boron nitride
- Single photon generation by pulsed excitation of a single dipole
Cited by in corpus (16)
- Single spin resonance in a van der Waals embedded paramagnetic defect
- Integrated Single Photon Emitters
- Mechanical Decoupling of Quantum Emitters in Hexagonal Boron Nitride from Low-Energy Phonon Modes
- Giant shift upon strain on the fluorescence spectrum of VN color centers in -BN
- Vibrational signatures for the identification of single-photon emitters in hexagonal boron nitride
- Probing the Optical Dynamics of Quantum Emitters in Hexagonal Boron Nitride
- Photon emission correlation spectroscopy as an analytical tool for quantum defects
- Photochromism in a Hexagonal Boron Nitride Single Photon Emitter
- Phonon sidebands of color centers in hexagonal boron nitride
- Single photon randomness originating from the symmetry of dipole emission and the unpredictability of spontaneous emission
- Color Centers in Hexagonal Boron Nitride
- Bistable carbon-vacancy defects in -BN
- Large-Scale Statistical Analysis of Defect Emission in hBN: Revealing Spectral Families and Influence of Flakes Morphology
- Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride
- Characterization of single photon sources for radiometry applications at room temperature
- Coupling hBN quantum emitters to 1D photonic crystal cavities