Giant shift upon strain on the fluorescence spectrum of V${}_{\mathrm{N}}$N${}_{\mathrm{B}}$ color centers in $h$-BN

Abstract

We study the effect of strain on the physical properties of the nitrogen antisite-vacancy pair in hexagonal boron nitride ($h$-BN), a color center that may be employed as a quantum bit in a two-dimensional material. With group theory and ab-initio analysis we show that strong electron-phonon coupling plays a key role in the optical activation of this color center. We find a giant shift on the zero-phonon-line (ZPL) emission of the nitrogen antisite-vacancy pair defect upon applying strain that is typical of $h$-BN samples. Our results provide a plausible explanation for the experimental observation of quantum emitters with similar optical properties but widely scattered ZPL wavelengths and the experimentally observed dependence of the ZPL on the strain.

7 pages, 3 figures

References in corpus (5)

• Two-Dimensional Material Nanophotonics
• Defect-related photoluminescence of hexagonal boron nitride
• Structural attributes and photo-dynamics of visible spectrum quantum emitters in hexagonal boron nitride
• \emph{Ab initio} calculation of spin-orbit coupling for NV center in diamond exhibiting dynamic Jahn-Teller effect
• Origin of nonclassical light emission from defects in multi-layer hexagonal boron nitride

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