675 citations · 7.5k across the 92 of their papers we have counts for
92 papers
The positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Meysam Mohseni, Péter Udvarhelyi, Gergő Thiering +1
Certain intrinsic point defects in silicon carbide are promising quantum systems with efficient spin-photon interface. Despite carbon vacancy in silicon carbide is an elementary an…
Carbon cluster emitters in silicon carbide
Pei Li, Péter Udvarhelyi, Song Li +2
Defect qubits in 4H-SiC are outstanding candidates for numerous applications in the rapidly emerging field of quantum technology. Carbon clusters can act as emission sources that m…
A telecom O-band emitter in diamond
Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky +15
Color centers in diamond are promising platforms for quantum technologies. Most color centers in diamond discovered thus far emit in the visible or near-infrared wavelength range,…
Bistable carbon-vacancy defects in -BN
Song Li, Adam Gali
Single photon emitters in hexagonal boron nitride have been extensively studied recently. Although unambiguous identification of the emitters is still under intense research, carbo…
Optical properties of SiV and GeV color centers in nanodiamonds under hydrostatic pressures up to 180 GPa
Baptiste Vindolet, Marie-Pierre Adam, Loïc Toraille +14
We investigate the optical properties of silicon-vacancy (SiV) and germanium-vacancy (GeV) color centers in nanodiamonds under hydrostatic pressure up to 180 GPa. The nanodiamonds…
Vacancy-related color centers in twodimensional silicon carbide monolayers
M. Mohseni, I. Abdolhosseini Sarsari, S. Karbasizadeh +4
Basic vacancy defects in twodimensional silicon carbide (2D-SiC) are examined by means of density functional theory calculations to explore their magneto-optical properties as well…