675 citations · 7.5k across the 92 of their papers we have counts for
22 papers · 1 filter
Quantum sensor in a single layer van der Waals material
Rohit Babar, Gergely Barcza, Anton Pershin +8
Point defect qubits in semiconductors have demonstrated their outstanding high spatial resolution sensing capabilities of broad multidisciplinary interest. Two-dimensional (2D) sem…
Photoluminescence lineshapes and charge state control of divacancy qubits in silicon carbide
A. Csóré, I. G. Ivanov, N. T. Son +1
Divacancy in its neutral charge state (VV) in 4H silicon carbide (SiC) is a leading quantum bit (qubit) contender. Owing to the lattice structure of 4H SiC…
Room-temperature control and electrical readout of individual nitrogen-vacancy nuclear spins
Michal Gulka, Daniel Wirtitsch, Viktor Ivády +7
Nuclear spins in semiconductors are leading candidates for quantum technologies, including quantum computation, communication, and sensing. Nuclear spins in diamond are particularl…
Photoluminescence at the ground state level anticrossing of the nitrogen-vacancy center in diamond
Viktor Ivády, Huijie Zheng, Arne Wickenbrock +9
The nitrogen-vacancy center (NV center) in diamond at magnetic fields corresponding to the ground state level anticrossing (GSLAC) region gives rise to rich photoluminescence (PL)…
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
Qiang Li, Jun-Feng Wang, Fei-Fei Yan +16
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperatu…
Ab initio theory of negatively charged boron vacancy qubit in hBN
Viktor Ivády, Gergely Barcza, Gergő Thiering +5
Highly correlated orbitals coupled with phonons in two-dimension are identified for paramagnetic and optically active boron vacancy in hexagonal boron nitride by first principles m…