Identification of a telecom wavelength single photon emitter in silicon

Abstract

We identify the exact microscopic structure of the G photoluminescence center in silicon by first principles calculations with including a self-consistent many-body perturbation method, which is a telecommunication wavelength single photon source. The defect constitutes of ${\text{C}}_{\text{s}}{\text{C}}_{\text{i}}$ carbon impurities in its ${\text{C}}_{\text{s}}-{\text{Si}}_{\text{i}}-{\text{C}}_{\text{s}}$ configuration in the neutral charge state, where $s$ and $i$ stand for the respective substitutional and interstitial positions in the Si lattice. We reveal that the observed fine structure of its optical signals originates from the athermal rotational reorientation of the defect. We attribute the monoclinic symmetry reported in optically detected magnetic resonance measurements to the reduced tunneling rate at very low temperatures. We discuss the thermally activated motional averaging of the defect properties and the nature of the qubit state.

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References in corpus (15)

• A linear response approach to the calculation of the effective interaction parameters in the LDA+U method
• All-electron self-consistent GW approximation: Application to Si, MnO, and NiO
• Theory of Spin-Conserving Excitation of the $N-V^{-}$ Center in Diamond
• Electron-phonon processes of the silicon-vacancy centre in diamond
• State-selective intersystem crossing in nitrogen-vacancy centers
• Single artificial atoms in silicon emitting at telecom wavelengths
• Broad diversity of near-infrared single-photon emitters in silicon
• Defect identification based on first-principles calculations for deep level transient spectroscopy
• Engineering telecom single-photon emitters in silicon for scalable quantum photonics
• Optical properties of an ensemble of G-centers in silicon
• Theoretical unification of hybrid-DFT and DFT+U methods for the treatment of localized orbitals
• Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states
• Highly enriched ${}^{28}$Si reveals remarkable optical linewidths and fine structure for well-known damage centers
• The role of screening in the density functional applied on transition metal defects in semiconductors
• Correlation effects in p-electron magnets: the case of RbO_2

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• Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
• Effect of Localization on Photoluminescence and Zero-Field Splitting of Silicon Color Centers
• A telecom O-band emitter in diamond
• Single G centers in silicon fabricated by co-implantation with carbon and proton