Wafer-scale nanofabrication of telecom single-photon emitters in silicon

Abstract

A highly promising route to scale millions of qubits is to use quantum photonic integrated circuits (PICs), where deterministic photon sources, reconfigurable optical elements, and single-photon detectors are monolithically integrated on the same silicon chip. The isolation of single-photon emitters, such as the G centers and W centers, in the optical telecommunication O-band, has recently been realized in silicon. In all previous cases, however, single-photon emitters were created uncontrollably in random locations, preventing their scalability. Here, we report the controllable fabrication of single G and W centers in silicon wafers using focused ion beams (FIB) with a probability exceeding 50%. We also implement a scalable, broad-beam implantation protocol compatible with the complementary-metal-oxide-semiconductor (CMOS) technology to fabricate single telecom emitters at desired positions on the nanoscale. Our findings unlock a clear and easily exploitable pathway for industrial-scale photonic quantum processors with technology nodes below 100 nm.

8 pages, 4 figures

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• Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide
• Cavity-enhanced zero-phonon emission from an ensemble of G centers in a silicon-on-insulator microring
• Purcell enhancement of silicon W centers in circular Bragg grating cavities
• Spectral stability of V2 centres in sub-micron 4H-SiC membranes
• Efficient activation of telecom emitters in silicon upon ns pulsed laser annealing
• Genuine and faux single G centers in carbon-implanted silicon
• Room-temperature photonic quantum computing in integrated silicon photonics with germanium-silicon single-photon avalanche diodes
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Bright and Purcell-enhanced single photon emission from a silicon G center
• Hopping of the center-of-mass of single G centers in silicon-on-insulator
• Ultralong-term high-density data storage with atomic defects in SiC
• Nanoscale positioning and in-situ enhancement of single G center in silicon using a fluorescence-localization technique
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Femtosecond laser induced creation of G and W-centers in silicon-on-insulator substrates
• Spectral stability of cavity-enhanced single-photon emitters in silicon
• Multipartite entanglement distribution in a topological photonic network
• Design for telecom-wavelength quantum emitters in silicon based on alkali-metal-saturated vacancy complexes
• Single G centers in silicon fabricated by co-implantation with carbon and proton
• Spin-photon Qubits for Scalable Quantum Network
• Mechanisms and Opportunities for Tunable High-Purity Single Photon Emitters: A Review of Hybrid Perovskites and Prospects for Bright Squeezed Vacuum
• Radiative electronic bound states in the continuum from defects in semiconductors