Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon

Abstract

The attributes of group-V-donor spins implanted in an isotopically purified ${}^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of ${}^{31}$P, hyperfine clock transitions in ${}^{209}$Bi and electrically controllable ${}^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P${}^{+}$ ions with an unprecedented $99.87\pm 0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications.

arXiv comment12 pages, 4 figures

References in corpus (22)

• Quantum Computing in the NISQ era and beyond
• Supplementary information for "Quantum supremacy using a programmable superconducting processor"
• Surface codes: Towards practical large-scale quantum computation
• Silicon Quantum Electronics
• A single-atom electron spin qubit in silicon
• Single-shot readout of an electron spin in silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• High-fidelity readout and control of a nuclear spin qubit in silicon
• Atomic clock transitions in silicon-based spin qubits
• Silicon quantum processor with robust long-distance qubit couplings
• Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking
• Coherent electrical control of a single high-spin nucleus in silicon
• Deterministic single ion implantation of rare-earth ions for nanometer resolution colour center generation
• Encoding a qubit in a spin
• Optimization of a solid-state electron spin qubit using Gate Set Tomography
• Ion Implantation for Deterministic Single Atom Devices
• Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device
• Fault-tolerance thresholds for the surface code with fabrication errors
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Surface Code Error Correction on a Defective Lattice
• The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Cited by in corpus (15)

• Wafer-scale nanofabrication of telecom single-photon emitters in silicon
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Quantum computation of stopping power for inertial fusion target design
• Roadmap on Atomic-scale Semiconductor Devices
• Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits
• Scalable Atomic Arrays for Spin-Based Quantum Computers in Silicon
• Materials for Quantum Technologies: a Roadmap for Spin and Topology
• Requirements on Quantum Superpositions of Macro-Objects for Sensing Neutrinos
• Improved placement precision of implanted donor spin qubits in silicon using molecule ions
• Scalable entanglement of nuclear spins mediated by electron exchange
• Pico-photonics: Anomalous Atomistic Waves in Silicon
• Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions
• Programmable activation of quantum emitters in high-purity silicon with focused carbon ion beams
• Electron readout contrast enhancement in the parallel nuclear regime of an exchange-coupled donor spin qubit system
• Focused deposition of levitated nanoscale Au droplets