Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Abstract

A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 ${}^{\mathrm{o}}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 ${}^{\mathrm{o}}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study.

4 pages, 6 figures

References in corpus (5)

• Single-shot read-out of an individual electron spin in a quantum dot
• Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Single-spin readout for buried dopant semiconductor qubits
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Cited by in corpus (5)

• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon
• Electron tunnel rates in a donor-silicon single electron transistor hybrid
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
• Near-Surface Electrical Characterisation of Silicon Electronic Devices Using Focused keV Ions