Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.

14 pages, 3 figures. Correction made to figure3(b)

References in corpus (1)

• Electrical readout of a spin qubit without double occupancy

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