Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

Abstract

We report measurements of spin-dependent scattering of conduction electrons by neutral donors in an accumulation-mode field-effect transistor formed in isotopically enriched silicon. Spin-dependent scattering was detected using electrically detected magnetic resonance where the spectra show resonant changes in the source-drain voltage for conduction electrons and electrons bound to donors. We discuss the utilization of spin-dependent scattering as a mechanism for the readout of donor spin-states in silicon based quantum computers.

14 pages, 3 figures. Correction made to figure3(b)

References in corpus (8)

• Electrical detection of 31P spin quantum states
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Stark Tuning of Donor Electron Spins in Silicon
• Electrical activation and electron spin coherence of ultra low dose antimony implants in silicon
• Davies ENDOR revisited: Enhanced sensitivity and nuclear spin relaxation
• Electrical readout of a spin qubit without double occupancy
• The ultra-sensitive electrical detection of spin Rabi oscillation at paramagnetic defects
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Cited by in corpus (21)

• Silicon Quantum Electronics
• Solid state quantum memory using the 31P nuclear spin
• Electron spin coherence and electron nuclear double resonance of Bi donors in natural Si
• Hybrid solid state qubits: the powerful role of electron spins
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Single-atom doping for quantum device development in diamond and silicon
• Quantum non-demolition measurements of single donor spins in semiconductors
• Optimal quantum multi-parameter estimation and application to dipole- and exchange-coupled qubits
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Electrically detected magnetic resonance of neutral donors interacting with a two-dimensional electron gas
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Electrical detection of free induction decay and Hahn echoes in phosphorus doped silicon
• Spin-dependent scattering in a silicon transistor
• Mapping of ion beam induced current changes in FinFETs
• Device fabrication and transport measurements of FinFETs built with ${}^{28}$Si SOI wafers towards donor qubits in silicon
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Electrically detected spin echoes of donor nuclei in silicon
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
• Quantum read-out and fast initialization of nuclear spin qubits with electric currents
• Isotope engineering of silicon and diamond for quantum computing and sensing applications
• Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs