Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs

Abstract

We demonstrate radio frequency (RF) readout of electrically detected magnetic resonance in phosphorus-doped silicon metal-oxide field-effecttransistors (MOSFETs), operated at liquid helium temperatures. For the first time, the Si:P hyperfine lines have been observed using radio frequency reflectometry, which is promising for high-bandwidth operation and possibly time-resolved detection of spin resonance in donor-based semiconductor devices. Here we present the effect of microwave (MW) power and MOSFET biasing conditions on the EDMR signals.

2 pages, 3 figures

References in corpus (4)

• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• Spin-dependent scattering in a silicon transistor
• Electrically detected magnetic resonance using radio-frequency reflectometry