Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Abstract

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

4 pages, 4 figures, submitted to APL

References in corpus (2)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors

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