Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

Abstract

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magnetic field allowing broadband operation. At milli-kelvin temperatures, continuous wave spectra were obtained up to 40 GHz, using both magnetic field and microwave frequency modulation. The spectra reveal the hyperfine-split electron spin resonances characteristic for Si:P and a central feature which displays the fingerprint of spin-spin scattering in the two-dimensional electron gas.

arXiv comment4 pages, 4 figures, submitted to APL

References in corpus (4)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Spin resonance of 2D electrons in a large-area silicon MOSFET

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• Critical issues in the formation of quantum computer test structures by ion implantation
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• Broadband Electrically Detected Magnetic Resonance Using Adiabatic Pulses
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
• Electrically detected spin echoes of donor nuclei in silicon
• Electrically detected magnetic resonance using radio-frequency reflectometry
• Coplanar stripline antenna design for optically detected magnetic resonance on semiconductor quantum dots
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
• Radio frequency readout of electrically detected magnetic resonance in phosphorus-doped silicon MOSFETs
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime