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D. McCamey

1 paper hereh-index 303k citations121 works total

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author position
  • first author1

Across the 1 of 1 paper where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci1

identity via Semantic Scholar / OpenAlex

most citedThe effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

18 citations · 18 across the 1 of their papers we have counts for

collaborators

3 papers

cond-mat.mtrl-sci2008★ 30 cited

Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor

L. H. Willems van Beveren, H. Huebl, D. R. McCamey +4

We report electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor. An on-chip transmission line is used to generate the oscillating magne…

cond-mat.other2008★ 29 cited

Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields

D. R. McCamey, G. W. Morley, H. A. Seipel +3

An experimental study on the nature of spin-dependent excess charge carrier transitions at the interface between (111) oriented phosphorous doped ([P] ~ 10^15 cm^3) crystalline sil…

cond-mat.mtrl-sci2004★ 18 cited

The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs

D. R. McCamey, M. Francis, J. C. McCallum +3

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…

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