activity
20042026
most citedElectrically-detected magnetic resonance in ion-implanted Si:P nanostructures

93 citations · 755 across the 26 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2022★ 2 cited

Quintet formation and exchange fluctuations: The role of stochastic resonance in singlet fission

Miles I. Collins, Francesco Campaioli, Murad J. Y. Tayebjee +2

Singlet fission describes the spin-conserving production of two triplet excitons from one singlet exciton. The existence of a spin-2 (quintet) triplet-pair state as a product of si…

cond-mat.mes-hall2021

Spatial Variation and Correlation of Spin Properties in Organic Light-Emitting Diodes

William J. Pappas, Rugang Geng, Adrian Mena +3

Devices which exploit the quantum properties of materials are widespread, with quantum information processors and quantum sensors showing significant progress. Organic devices offe…

cond-mat.mes-hall2019★ 22 cited

Tailored nanodiamonds for hyperpolarized 13C MRI

T. Boele, D. E. J. Waddington, T. Gaebel +5

Nanodiamond is poised to become an attractive material for hyperpolarized 13C MRI if large nuclear polarizations can be achieved without the accompanying rapid spin-relaxation driv…

cond-mat.mes-hall2015★ 14 cited

Exciton-polaron complexes in pulsed electrically-detected magnetic resonance

T. L. Keevers, W. J. Baker, D. R. McCamey

Several microscopic pathways have been proposed to explain the large magnetic effects observed in organic semiconductors, but identifying and characterising which microscopic proce…

cond-mat.mes-hall2006★ 20 cited

Ion implanted Si:P double-dot with gate tuneable interdot coupling

V. C. Chan, T. M. Buehler, A. J. Ferguson +6

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capac…

cond-mat.mes-hall2005

An ion-implanted silicon single-electron transistor

V. C. Chan, D. R. McCamey, T. M. Buehler +6

We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads o…