Ion implanted Si:P double-dot with gate tuneable interdot coupling

Abstract

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot.

11 pages, 5 figures

References in corpus (8)

• Quantum Computation with Quantum Dots
• Electron transport through double quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Coherent manipulation of electronic states in a double quantum dot
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Charge-qubit operation of an isolated double quantum dot
• Differential Charge Sensing and Charge Delocalization in a Tunable Double Quantum Dot
• Coulomb Blockade in low mobility nanometer size Si:MOSFETs

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• Carbon nanotubes for coherent spintronic devices
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Singlet-Triplet Physics and Shell Filling in Carbon Nanotube Double Quantum Dots
• A gate-defined silicon quantum dot molecule
• Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
• Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire