A gate-defined silicon quantum dot molecule
arXiv:0806.0422 · doi:10.1063/1.2938693
Abstract
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum in weakly coupled dots and an energy level anticrossing in strongly coupled ones. Such a quantum dot molecule with both charge and energy quantization provides the essential prerequisite for future implementation of silicon-based quantum computations.
11pages,3figures
References in corpus (9)
- Electron transport through double quantum dots
- Driven coherent oscillations of a single electron spin in a quantum dot
- Coherent manipulation of electronic states in a double quantum dot
- Charge-qubit operation of an isolated double quantum dot
- Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
- Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
- Relation between Barrier Conductance and Coulomb Blockade Peak Splitting for Tunnel-Coupled Quantum Dots
- Ion implanted Si:P double-dot with gate tuneable interdot coupling
- Nonequilibrium transport and population inversion in double quantum dot systems
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