Enhancement mode double top gated MOS nanostructures with tunable lateral geometry

Abstract

We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of parasitic dot formation is exhibited in several MOS quantum dots with an open lateral quantum dot geometry. Decreases in mobility and increases in charge defect densities (i.e. interface traps and fixed oxide charge) are measured for critical process steps, and we correlate low disorder behavior with a quantitative defect density. This work provides quantitative guidance that has not been previously established about defect densities for which Si quantum dots do not exhibit parasitic dot formation. These devices make use of a double-layer gate stack in which many regions, including the critical gate oxide, were fabricated in a fully-qualified CMOS facility.

11 pages, 6 figures, 3 tables, accepted for publication in Phys. Rev. B

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• Quantum transport properties of industrial ${}^{28}$Si/${}^{28}$SiO${}_2$
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
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• Quantum theory of the charge stability diagram of semiconductor double quantum dot systems
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• Efficient self-consistent quantum transport simulator for quantum devices
• Charge Offset Stability in Si Single Electron Devices with Al Gates
• Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
• Theory of Spin Relaxation in Two-Electron Lateral Coupled Si/SiGe Quantum Dots
• Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
• Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
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• Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability
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• Determining the Location and Cause of Unintentional Quantum Dots in a Nanowire
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• Capacitance modeling of complex topographical silicon quantum dot structures