Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Abstract

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO${}_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\le$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $\mu$C/cm${}^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14,000 cm${}^2$/Vs) to within a factor of two of the unexposed sample's mobility (23,000 cm${}^2$/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T=0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

References in corpus (17)

• Quantum Computation with Quantum Dots
• Silicon Quantum Electronics
• A Two Qubit Logic Gate in Silicon
• A single-atom electron spin qubit in silicon
• Single-shot readout of an electron spin in silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
• Valley Polarization in Si(100) at Zero Magnetic Field
• Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot
• The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Enhancement mode double top gated MOS nanostructures with tunable lateral geometry
• Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
• Spin relaxation and coherence times for electrons at the Si/SiO2 interface
• Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
• Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance
• Spin resonance of 2D electrons in a large-area silicon MOSFET

Cited by in corpus (17)

• Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
• Light effective hole mass in undoped Ge/SiGe quantum wells
• Quantum transport properties of industrial ${}^{28}$Si/${}^{28}$SiO${}_2$
• Multiplexed quantum transport using commercial off-the-shelf CMOS at sub-kelvin temperatures
• Electron irradiation on multilayer PdSe${}_2$ field effect transistors
• Tunable coupling and isolation of single electrons in silicon metal-oxide-semiconductor quantum dots
• A fabrication guide for planar silicon quantum dot heterostructures
• Valley splitting in silicon from the interference pattern of quantum oscillations
• A low-disorder Metal-Oxide-Silicon double quantum dot
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• High quality CVD deposition of Ge layers for Ge/SiGe Quantum Well heterostructures
• Reducing disorder in Ge quantum wells by using thick SiGe barriers
• Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
• Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
• Depletion-mode Quantum Dots in Intrinsic Silicon
• Impact of surface treatments on the transport properties of germanium 2DHGs
• Control of threshold voltages in Si/SiGe quantum devices via optical illumination