A fabrication guide for planar silicon quantum dot heterostructures

Abstract

We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrinsic material properties, interfaces and fabrication processes plays a crucial role in the formation of electrostatically defined quantum dots. Processes such as oxidation, physical vapor deposition and atomic-layer deposition must be tailored in order to prevent unwanted side effects such as defects, disorder and dewetting. In two directly related manuscripts written in parallel we use techniques described in this work to create depletion-mode quantum dots in intrinsic silicon, and low-disorder silicon quantum dots defined with palladium gates. While we discuss three different planar gate structures, the general principles also apply to 0D and 1D systems, such as self-assembled islands and nanowires.

arXiv commentAccepted for publication in Nanotechnology. 31 pages, 12 figures

References in corpus (26)

• Surface codes: Towards practical large-scale quantum computation
• Silicon Quantum Electronics
• A Two Qubit Logic Gate in Silicon
• Charge noise and spin noise in a semiconductor quantum device
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Electron-hole symmetry in a semiconducting carbon nanotube quantum dot
• A fast "hybrid" silicon double quantum dot qubit
• Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon
• Electron-Hole Crossover in Graphene Quantum Dots
• Electrical detection of 31P spin quantum states
• Coherent Control of Rydberg States in Silicon
• A Dressed Spin Qubit in Silicon
• Spin states of the first four holes in a silicon nanowire quantum dot
• Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
• Observation of the single-electron regime in a highly tunable silicon quantum dot
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Time-Resolved Single Dopant Charge Dynamics in Silicon
• Annealing shallow Si/SiO${}_2$ interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
• Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Ambipolar quantum dots in intrinsic silicon
• Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing
• Effect of the Triplet State on the Random Telegraph Signal in Si n-MOSFETs
• Depletion-mode Quantum Dots in Intrinsic Silicon

Cited by in corpus (10)

• Low-frequency charge noise in Si/SiGe quantum dots
• Toward Robust Autotuning of Noisy Quantum Dot Devices
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Fabrication process and failure analysis for robust quantum dots in silicon
• Palladium gates for reproducible quantum dots in silicon
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Single-charge occupation in ambipolar quantum dots
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Engineering local strain for single-atom nuclear acoustic resonance in silicon
• Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode