Ambipolar quantum dots in undoped silicon fin field-effect transistors

Abstract

We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by replacing conventional highly-doped source and drain electrodes by a metallic nickel silicide with Fermi level close to the silicon mid-gap position. Such devices operate in a dual mode, either as classical field-effect or single-electron transistor. We implement a classical logic NOT gate at low temperature by tuning two interconnected transistors into opposite polarities. In the quantum regime, we demonstrate stable quantum dot operation in the few charge carrier Coulomb blockade regime for both electrons and holes.

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Cited by in corpus (19)

• A hole spin qubit in a fin field-effect transistor above 4 kelvin
• Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
• Recent advances in hole-spin qubits
• Silicon quantum dot devices with a self-aligned second gate layer
• Fully tunable longitudinal spin-photon interactions in Si and Ge quantum dots
• Two-qubit logic with anisotropic exchange in a fin field-effect transistor
• Exchange interaction of hole-spin qubits in double quantum dots in highly anisotropic semiconductors
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Single-charge occupation in ambipolar quantum dots
• Cross-architecture Tuning of Silicon and SiGe-based Quantum Devices Using Machine Learning
• Modular nanomagnet design for spin qubits confined in a linear chain
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• A compact and versatile cryogenic probe station for quantum device testing
• Quantification of the heavy-hole--light-hole mixing in two-dimensional hole gases
• An ambipolar single-charge pump in silicon
• State Initialization of a Hot Spin Qubit in a Double Quantum Dot by Measurement-Based Quantum Feedback Control
• Fully tunable hyperfine interactions of hole spin qubits in Si and Ge quantum dots