Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot

Abstract

We describe a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor, which is compatible with conventional Si CMOS fabrication. A multi-layer gate design gives independent control of the carrier density in the dot and reservoirs. Clear Coulomb blockade oscillations are observed, and source-drain biasing measurements show that it is possible to deplete the dot down to the few hole regime, with excited states clearly visible. The architecture is sufficiently versatile that a second hole dot could be induced adjacent to the first one.

4 pages, 4 figures. The following article has been submitted to Applied Physics Letters

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• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Spin blockade as a probe of Zeeman interactions in hole quantum dots
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Ambipolar quantum dots in intrinsic silicon
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
• Depletion-mode Quantum Dots in Intrinsic Silicon
• A comprehensive study of out-of-equilibrium Kondo effect and Coulomb blockade
• G-factors of hole bound states in spherically symmetric potentials in cubic semiconductors