Single-hole transistor in p-type GaAs/AlGaAs heterostructures
arXiv:cond-mat/0510562 · doi:10.1063/1.2139994
Abstract
A single-hole transistor is patterned in a p-type, C-doped GaAs/AlGaAs heterostructure by AFM oxidation lithography. Clear Coulomb blockade resonances have been observed at T=300 mK. A charging energy of ~ 1.5 meV is extracted from Coulomb diamond measurements, in agreement with the lithographic dimensions of the dot. The absence of excited states in Coulomb diamond measurements, as well as the temperature dependence of Coulomb peak heights indicate that the dot is in the multi-level transport regime. Fluctuations in peak spacings larger than the estimated mean single-particle level spacing are observed.
4 pages, 5 figures
References in corpus (6)
- Quantum Computation with Quantum Dots
- Spin relaxation and decoherence of holes in quantum dots
- Statistics of the Coulomb blockade peak spacings of a silicon quantum dot
- Spin relaxation times of 2D holes from spin sensitive bleaching of inter-subband absorption
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