Gate-tunable Electronic Transport in p-type GaSb Quantum Wells

Abstract

We investigate two-dimensional hole transport in GaSb quantum wells at cryogenic temperatures using gate-tunable devices. Measurements probing the valence band structure of GaSb unveil a significant spin splitting of the ground subband induced by spin-orbit coupling. We characterize the carrier densities, effective masses and quantum scattering times of these spin-split subbands and find that the results are in agreement with band structure calculations. Additionally, we study the weak anti-localization correction to the conductivity present around zero magnetic field and obtain information on the phase coherence. These results establish GaSb quantum wells as a platform for two-dimensional hole physics and lay the foundations for future experiments in this system.

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Cited by in corpus (5)

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• Voltage control of the quantum scattering time in InAs/GaSb/InAs trilayer quantum wells
• Density of states measurements for heavy subband of holes in HgTe quantum wells
• Gate control, g-factors and spin orbit energy of p-type GaSb nanowire quantum dot devices