Passivation of Edge States in Etched InAs Sidewalls

Abstract

We investigate different methods of passivating sidewalls of wet etched InAs heterostructures in order to suppress inherent edge conduction that is presumed to occur due to band bending at the surface leading to charge carrier accumulation. Passivation techniques including sulfur, positively charged compensation dopants and plasma enhanced chemical vapor deposition of ${\mathrm{SiN}}_{\mathrm{x}}$ do not show an improvement. Surprisingly, atomic layer deposition of ${\mathrm{Al}}_2{\mathrm{O}}_3$ leads to an increase in edge resistivity of more than an order of magnitude. While the mechanism behind this change is not fully understood, possible reasons are suggested.

References in corpus (8)

• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Edge Channel Transport in InAs/GaSb Topological Insulating Phase
• Edge Transport in the Trivial Phase of InAs/GaSb
• Non-local transport via edge-states in InAs/GaSb coupled quantum wells
• Edge transport in InAs and InAs/GaSb quantum wells
• Decoupling edge versus bulk conductance in the trivial regime of an InAs/GaSb double quantum well using Corbino ring geometry
• Influence of etching processes on electronic transport in mesoscopic InAs/GaSb quantum well devices

Cited by in corpus (8)

• High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport
• Selective Control of Conductance Modes in Multi-terminal Josephson Junctions
• Counterflowing edge current and its equilibration in quantum Hall devices with sharp edge potential: Roles of incompressible strips and contact configuration
• Gate-tunable Electronic Transport in p-type GaSb Quantum Wells
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells
• Coexistence of Topological and Normal Insulating Phases in Electro-Optically Tuned InAs/GaSb Bilayer Quantum Wells
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)