Edgeless and Purely Gate-Defined Nanostructures in InAs Quantum Wells

Abstract

Nanostructures in InAs quantum wells have so far remained outside of the scope of traditional microfabrication techniques based on etching. This is due to parasitic parallel conduction arising from charge carrier accumulation at the physical edges of samples. Here we present a technique which enables the realization of quantum point contacts and quantum dots in two-dimensional electron gases of InAs purely by electrostatic gating. Multiple layers of top gates separated by dielectric layers are employed. Full quantum point contact pinch-off and measurements of Coulomb-blockade diamonds of quantum dots are demonstrated.

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Cited by in corpus (6)

• A Gate-Defined Quantum Point Contact in an InAs Two-Dimensional Electron Gas
• Few-electron Single and Double Quantum Dots in an InAs Two-Dimensional Electron Gas
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
• Clean quantum point contacts in an InAs quantum well grown on a lattice-mismatched InP substrate
• Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)