Quantum Spin Hall Effect in Inverted Type II Semiconductors

Abstract

The quantum spin Hall (QSH) state is a topologically non-trivial state of quantum matter which preserves time-reversal symmetry; it has an energy gap in the bulk, but topologically robust gapless states at the edge. Recently, this novel effect has been predicted and observed in HgTe quantum wells. In this work we predict a similar effect arising in Type-II semiconductor quantum wells made from InAs/GaSb/AlSb. Because of a rare band alignment the quantum well band structure exhibits an "inverted" phase similar to CdTe/HgTe quantum wells, which is a QSH state when the Fermi level lies inside the gap. Due to the asymmetric structure of this quantum well, the effects of inversion symmetry breaking and inter-layer charge transfer are essential. By standard self-consistent calculations, we show that the QSH state persists when these corrections are included, and a quantum phase transition between the normal insulator and the QSH phase can be electrically tuned by the gate voltage.

5 pages,4 figures. Submitted to PRL. For high resolution figures see final published version when available

References in corpus (9)

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Quantum Spin Hall Effect
• The Helical Liquid and the Edge of Quantum Spin Hall Systems
• Stability of the quantum spin Hall effect: effects of interactions, disorder, and Z_2 topology
• Tuning phase transition between quantum spin Hall and ordinary insulating phases
• Excitonic instability and electric-field-induced phase transition towards a two dimensional exciton condensate
• Optical transitions in broken gap heterostructures

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• Evidence for an excitonic insulator phase in a zero-gap InAs/GaSb bilayer
• Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
• Analytical theory and possible detection of the $ac$ quantum spin Hall effect
• Interedge backscattering in time-reversal symmetric quantum spin Hall Josephson junctions
• Engineering chiral-induced spin selectivity in an artificial topological quantum well
• A monolayer transition metal dichalcogenide as a topological excitonic insulator
• Epitaxial aluminum layer on antimonide heterostructures for exploring Josephson junction effects
• To See a World in a Grain of Sand -- The Scientific Life of Shoucheng Zhang
• Many-particle hybridization of optical transitions from zero-mode Landau levels in HgTe quantum wells
• Torsional Hall Viscosity of Massive Chern Insulators: Magnetic Field and Momentum Deformations
• Higher-order topological insulator in cubic semiconductor quantum wells
• Buried Dirac points in quantum spin Hall insulators: Implications for Majorana Kramers pair-based quantum computing
• Microwave Photocurrent from the Helical Edge state of InAs/GaInSb Bilayers
• Localization and entanglement characterization of edge states in HgTe quantum wells in a finite strip geometry
• Topological excitations in quasi two-dimensional quantum magnets with weak interlayer interactions
• Tunable effective length of fractional Josephson junctions
• Band inversion transition in HgTe nanowire grown along the [001] direction
• Spin-textured Chern bands in AB-stacked transition metal dichalcogenide bilayers
• Protected helical transport in magnetically doped quantum wires: Beyond the one-dimensional paradigm
• Emerging nonlinear Hall effect in Kane-Mele two-dimensional topological insulators
• Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor