Chern insulating state in laterally patterned semiconductor heterostructures

Abstract

Hexagonally patterned two-dimensional $p$-type semiconductor systems are quantum simulators of graphene with strong and highly tunable spin-orbit interactions. We show that application of purely in-plane magnetic fields, in combination with the crystallographic anisotropy present in low-symmetry semiconductor interfaces, allows Chern insulating phases to emerge from an originally topologically insulating state after a quantum phase transition. These phases are characterized by pairs of co-propagating edge modes and Hall conductivities ${\sigma }_{xy}=+\frac{2e^2}{h},-\frac{2e^2}{h}$ in the absence of Landau levels or cyclotron motion. With current lithographic technology, the Chern insulating transitions are predicted to occur in GaAs heterostructures at magnetic fields of $\sim 5\text{T}$.

References in corpus (35)

• Quantum Spin Hall Effect in Graphene
• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Majorana Fermions and a Topological Phase Transition in Semiconductor-Superconductor Heterostructures
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Experimental realisation of the topological Haldane model
• Quantum Spin Hall Effect
• A generic new platform for topological quantum computation using semiconductor heterostructures
• Majorana fermions in a tunable semiconductor device
• Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
• Evidence for Helical Edge Modes in Inverted InAs/GaSb Quantum Wells
• Topological quantization of the spin Hall effect in two-dimensional paramagnetic semiconductors
• Bose-Einstein Condensation of Excitons in Bilayer Electron Systems
• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• The Helical Liquid and the Edge of Quantum Spin Hall Systems
• Spontaneous Quantum Hall States in Chirally-stacked Few-Layer Graphene Systems
• Artificial graphene as a tunable Dirac material
• Quantum Anomalous Hall Effect in Graphene Proximity Coupled to an Antiferromagnetic Insulator
• Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
• Fractional topological insulators
• Time-reversal-symmetry-broken quantum spin Hall effect
• Bulk-boundary correspondence of topological insulators from their Green's functions
• Quantum Anomalous Hall State in Bilayer Graphene
• Microscopic theory of quantum anomalous Hall effect in graphene
• Quantum anomalous Hall effect with tunable Chern number in magnetic topological insulator film
• In-plane Magnetization Induced Quantum Anomalous Hall Effect
• Observation of a Helical Luttinger-Liquid in InAs/GaSb Quantum Spin Hall Edges
• Images of edge current in InAs/GaSb quantum wells
• Topological Insulating States in Laterally Patterned Ordinary Semiconductors
• Robustness of Quantum Spin Hall Effect in an External Magnetic Field
• Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• Quantized Anomalous Hall Insulator in a Nanopatterned Two-Dimensional Electron Gas
• Realising Haldane's vision for a Chern insulator in buckled lattices

Cited by in corpus (6)

• Generating a topological anomalous Hall effect in a non-magnetic conductor
• Intrinsic first and higher-order topological superconductivity in a doped topological insulator
• Artificial Graphene: Unconventional Superconductivity in a Honeycomb Superlattice
• Tuning the topological insulator states of artificial graphene
• Floquet topological phase transitions in a kicked Haldane-Chern insulator
• Two-dimensional topological semimetal state in a nanopatterned semiconductor system