Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure

Abstract

We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers are instead induced electrostatically. We use these devices to perform a direct comparison of the scattering mechanisms of two-dimensional (2D) electrons (${\mu }_{\text{peak}}=4\times 10^6{\text{cm}}^2/\text{Vs}$) and holes (${\mu }_{\text{peak}}=0.8\times 10^6{\text{cm}}^2/\text{Vs}$) in the same conduction channel with nominally identical disorder potentials. We find significant discrepancies between electron and hole scattering, with the hole mobility being considerably lower than expected from simple theory.

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References in corpus (2)

• Transport and percolation in a low-density high-mobility two-dimensional hole system
• Ballistic transport in induced one-dimensional hole systems

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