High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces

Abstract

We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times 10^{11}$ cm${}^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm${}^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.

4 pages, 4 figures, submitted to Applied Physics Letters

References in corpus (4)

• Integer quantum Hall effect on a six valley hydrogen-passivated silicon (111) surface
• Fabrication and characterisation of ambipolar devices on an undoped AlGaAs/GaAs heterostructure
• High mobility two-dimensional electron system on hydrogen-passivated silicon(111) surfaces
• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface

Cited by in corpus (6)

• The 2D metal-insulator transition as a strong localization induced crossover phenomenon
• Screening and transport in 2D semiconductor systems at low temperatures
• Valley-dependent 2D transport in Si-MOSFETs
• Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
• Quantum oscillations of transport coefficients and capacitance: an unexpected manifestation of the spin-Hall effect
• Anderson Localization of Electrons in Silicon Donor Chains