Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
arXiv:0903.1862 · doi:10.1103/PhysRevB.80.161310
Abstract
Low-field magnetotransport measurements on a high mobility (mu=110,000 cm^2/Vs) two-dimensional (2D) electron system on a H-terminated Si(111) surface reveal a sixfold valley degeneracy with a valley splitting <= 0.1 K. The zero-field resistivity rho_{xx} displays strong temperature dependence for 0.07 < T < 25 K as predicted for a system with high degeneracy and large mass. We present a method for using the low-field Hall coefficient to probe intervalley momentum transfer (valley drag). The relaxation rate is consistent with Fermi liquid theory, but a small residual drag as T->0 remains unexplained.
5 pages, 4 figures; revised and slightly shortened for publication;
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Cited by in corpus (8)
- Electronic transport in two dimensional graphene
- Valley Degenerate 2D Electrons in the Lowest Landau Level
- Fractional Quantum Hall Effect in a Diluted Magnetic Semiconductor
- Quantum Hall Valley Nematics
- A metal-insulator transition in 2D: Established facts and open questions
- High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces
- Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
- Topology- and symmetry-protected domain wall conduction in quantum Hall nematics