Hall coefficient and magnetoresistance of 2D spin-polarized electron systems

Abstract

Recent measurements of the 2D Hall resistance show that the Hall coefficient is independent of the applied in-plane magnetic field, i.e., the spin-polarization of the system. We calculate the weak-field Hall coefficient and the magnetoresistance of a spin polarized 2D system using the semi-classical transport approach based on the screening theory. We solve the coupled kinetic equations of the two carrier system including electron-electron interaction. We find that the in-plane magnetic field dependence of the Hall coefficient is suppressed by the weakening of screening and the electron-electron interaction. However, the in-plane magnetoresistance is mostly determined by the change of the screening of the system, and can therefore be strongly field dependent.

5 pages with 6 figures

References in corpus (5)

• Metal-insulator transition in two-dimensional electron systems
• The so-called two dimensional metal-insulator transition
• Temperature and Magnetic Field Enhanced Hall Slope of a Dilute 2D Hole System in the Ballistic Regime
• Temperature dependent weak field Hall resistance in 2D carrier systems
• Nonmonotonic Temperature Dependence of the Hall Resistance for 2D Electron System in Si

Cited by in corpus (3)

• Orbital Landau level dependence of the fractional quantum Hall effect in quasi-two dimensional electron layers: finite-thickness effects
• Temperature-dependent transport in a sixfold degenerate two-dimensional electron system on a H-Si(111) surface
• High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite