Hall Coefficient of a Dilute 2D Electron System in Parallel Magnetic Field
arXiv:cond-mat/0008456 · doi:10.1103/PhysRevB.63.193304
Abstract
Measurements in magnetic fields applied at a small angle with respect to the 2D plane of the electrons of a low-density silicon MOSFET indicate that the Hall coefficient is independent of parallel field from H=0 to , the field above which the longitudinal resistance saturates and the electrons have reached full spin-polarization. This implies that the mobilities of the spin-up and spin-down electrons remain comparable at all magnetic fields, and suggests there is strong mixing of spin-up and spin-down electron states.
4 pages, 2 figures
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- Metallic behavior and related phenomena in two dimensions
- Spin Degree of Freedom in a Two-Dimensional Electron Liquid
- Magnetoresistance of a two-dimensional electron gas in a parallel magnetic field
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Cited by in corpus (8)
- Statistical mechanics of complex networks
- Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
- Magnetoresistance of double layer hybrid system in tilted magnetic field
- High magnetic field induced charge density waves and sign reversal of the Hall coefficient in graphite
- P-wave pairing and ferromagnetism in the metal-insulator transition in two dimensions
- Positive Quantum Magnetoresistance in Tilted Magnetic Field
- Hall coefficient and magnetoresistance of 2D spin-polarized electron systems
- Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's