Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle

Abstract

Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to completely align the spins of the electrons are comparable. By small-angle Shubnikov-de Haas oscillation measurements that allow separate determinations of the spin-up and spin-down subband populations, we show that $H_{sat}=H_s$ to an accuracy of 5% for electron densities $n_s>3\times 10^{11}$ cm${}^{-2}$.

4 pages, 3 figures; minor changes, references updated and added

References in corpus (1)

• In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

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• On the Electron-Electron Interactions in Two Dimensions
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• Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
• Hall Coefficient and electron-electron interaction of 2D electrons in Si-MOSFET's
• Resistivity of the insulating phase approaching the 2D metal-insulator transition: the effect of spin polarization
• Elementary electronic excitation from a two-dimensional hole gas in the presence of spin-orbit interaction