Instability of the Two-Dimensional Metallic Phase to Parallel Magnetic Field

Abstract

We report on magnetotransport studies of the unusual two-dimensional metallic phase in high mobility Si-MOS structures. We have observed that the magnetic field applied in the 2D plane suppresses the metallic state, causing the resistivity to increase dramatically by more than 30 times. Over the total existence range of the metallic state, we have found three distinct types of the magnetoresistance, related to the corresponding quantum corrections to the conductivity. Our data suggest that the unusual metallic state is a consequence of both spin- and Coulomb-interaction effects.

6 pages, Latex, 4 ps figs

Cited by in corpus (76)

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• On the Theory of Metal-Insulator Transitions in Gated Semiconductors
• Unexpected Behavior of the Local Compressibility Near the B=0 Metal-Insulator Transition
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• Metal-insulator transition in 2D: resistance in the critical region
• Unconventional Metallic State in Two Dimensional System With Broken Inversion Symmetry
• Anisotropic magnetoresistance of GaAs two-dimensional holes
• Re-entrant insulator-metal-insulator transition at B=0 in a two dimensional hole gas
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• Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers
• Screening Breakdown on the Route toward the Metal-Insulator Transition in Modulation Doped Si/SiGe Quantum Wells
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• Effect of Local Magnetic Moments on the Metallic Behavior in Two Dimensions
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• Recent developments in the field of the metal-insulator transition in two dimensions
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• Temperature-Dependence of the Resistivity of a Dilute 2D Electron System in High Parallel Magnetic Field
• Spin Polarization of Two-Dimensional Electrons Determined from Shubnikov-de Haas Oscillations as a Function of Angle
• Two-species percolation and Scaling theory of the metal-insulator transition in two dimensions
• The energy scale behind the metallic behaviors in low-density Si-MOSFETs
• Absence of Floating Delocalized States in a Two-Dimensional Hole Gas
• Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
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