Anisotropic magnetoresistance of GaAs two-dimensional holes
arXiv:cond-mat/9911239 · doi:10.1103/PhysRevLett.84.5592
Abstract
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field (), on the direction of relative to both the crystal axes and the current direction. The magnetoresistance features, and in particular the value of above which the resistivity exhibits an insulating behavior, depend on the orientation of . To explain the data, the anisotropic band structure of the holes and a re-population of the spin-subbands in the presence of , as well as the coupling of the orbital motion to , need to be taken into account.
4 pages, 5 figures. To appear in PRL 84
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Cited by in corpus (41)
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- Highly anisotropic g-factor of two-dimensional hole systems
- In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems
- Spin polarization and g-factor of a dilute GaAs two-dimensional electron system
- Zeeman splitting in ballistic hole quantum wires
- Spin-orbit interactions in inversion-asymmetric 2D hole systems: a variational analysis
- The so-called two dimensional metal-insulator transition
- Spin Orientation of Holes in Quantum Wells
- Weak anisotropy and disorder dependence of the in-plane magnetoresistance in high mobility (100) Si-inversion layers
- Anisotropic Electrical Spin Injection in Ferromagnetic Semiconductor Heterostructures
- The 2D metal-insulator transition as a strong localization induced crossover phenomenon
- High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
- Anomalous Spin Polarization of GaAs Two-Dimensional Hole Systems
- Strong influence of spin-orbit coupling on magnetotransport in two-dimensional hole systems
- Spin-valley phase diagram of the two-dimensional metal-insulator transition
- Spin Density Matrix of Spin-3/2 Hole Systems
- Spin-orbit induced anisotropy in the magnetoconductance of two-dimensional metals
- Observation of orientation- and -dependent Zeeman spin-splitting in hole quantum wires on (100)-oriented AlGaAs/GaAs heterostructures
- Observation of the Kondo Effect in a Spin-3/2 Hole Quantum Dot
- Anisotropic modification of the effective hole -factor by electrostatic confinement
- Low-field magnetoresistance in GaAs 2D holes
- Spin Polarization of Quasi Two-Dimensional Hole Systems
- Spin polarization induced tenfold magneto-resistivity of highly metallic 2D holes in a narrow GaAs quantum well
- Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
- Using a tunable quantum wire to measure the large out-of-plane spin splitting of quasi two-dimensional holes in a GaAs nanostructure
- Modulating the growth conditions: Si as an acceptor in (110) GaAs for high mobility p-type heterostructures
- Interplay between one-dimensional confinement and crystallographic anisotropy in ballistic hole quantum wires
- Colossal magnetoresistance in an ultra-clean weakly interacting 2D Fermi liquid
- A metal-insulator transition in 2D: Established facts and open questions
- Magnetic Field Induced Spin Polarization of AlAs Two-dimensional Electrons
- g-Factor anisotropy of hole quantum wires induced by the Rashba interaction
- Signatures of quantum mechanical Zeeman effect in classical transport due to topological properties of two-dimensional spin-3/2 holes
- Nonvanishing anisotropic magnetoresistance in Rashba two-dimensional electron systems with nonmagnetic disorders
- Band-mixing-mediated Andreev reflection of semiconductor holes
- Inducing a metal-insulator transition in disordered interacting Dirac fermion systems via an external magnetic field
- Confinement symmetry, mobility anisotropy, and metallic behavior in (311)A GaAs 2D holes
- Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
- Non-monotonic magnetic field and density dependence of in-plane magnetoresistance in dilute two-dimensional holes in GaAs/AlGaAs
- Spin polarization and transition from metallic to insulating behavior in 2D systems