Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
arXiv:1511.05168 · doi:10.1103/PhysRevB.92.161405
Abstract
Recent study of a high-mobility 2D hole gas in a strained Ge quantum well revealed strong transport anisotropy in the quantum Hall regime when the magnetic field was tilted away from the sample normal. In the present study we demonstrate that the anisotropy persists to such high temperatures and filling factors that quantum oscillations are no longer observed. This finding rules out the formation of a stripe phase as a possible origin for the observed anisotropy. However, we also show that the observed anisotropy is not consistent with other known anisotropies, such as those arising from finite thickness effects or surface roughness.
References in corpus (9)
- Melting of a 2D Quantum Electron Solid in High Magnetic Field
- Colossal negative magnetoresistance in a 2D electron gas
- Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG
- Observation of microwave-induced resistance oscillations in strained Ge/SiGe quantum wells
- Spinless composite fermions in an ultra-high quality strained Ge quantum well
- Shubnikov-de Haas oscillations in GaAs quantum wells in tilted magnetic fields
- Hall field-induced resistance oscillations in Ge/SiGe quantum wells
- Strong Transport Anisotropy in a Ge/SiGe Quantum Well in Tilted Magnetic Fields
- Nonlinear transport in 2D electron gas exhibiting colossal negative magnetoresistance