Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen

Abstract

We compare the effects of temperature and parallel magnetic field on the two-dimensional metallic behavior within the unified model of temperature and field dependent effective disorder arising from the screened charged impurity scattering. We find, consistent with experimental observations, that the temperature and field dependence of resistivity should be qualitatively similar in n-Si MOSFET and very different in n-GaAs 2D metallic systems.

7 pages, 5 figures, revised version with substantial addition

References in corpus (3)

• Metal-insulator transition in two-dimensional electron systems
• Quasiparticle effective mass divergence in two dimensional electron systems
• In-plane magnetodrag in dilute bilayer two-dimensional systems: a Fermi liquid theory

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