Density-tuned effective metal-insulator transitions in 2D semiconductor layers: Anderson localization or Wigner crystallization
arXiv:2211.10673 · doi:10.1103/PhysRevB.107.195435
Abstract
Electrons (or holes) confined in 2D semiconductor layers have served as model systems for studying disorder and interaction effects for almost 50 years. In particular, strong disorder drives the metallic 2D carriers into a strongly localized Anderson insulator (AI) at low densities whereas pristine 2D electrons in the presence of no (or little) disorder should solidify into a Wigner crystal at low carrier densities. Since the disorder in 2D semiconductors is mostly Coulomb disorder arising from random charged impurities, the applicable physics is complex as the carriers interact with each other as well as with the random charged impurities through the same long-range Coulomb coupling. By critically theoretically analyzing the experimental transport data in depth using a realistic transport theory to calculate the low-temperature 2D resistivity as a function of carrier density in 11 different experimental samples covering 9 different materials, we establish, utilizing the Ioffe-Regel-Mott criterion for strong localization, a direct connection between the critical localization density for the 2D metal-insulator transition (MIT) and the sample mobility deep into the metallic state, which for clean samples could lead to a localization density low enough to make the transition appear to be a Wigner crystallization. We believe that the insulating phase is always an effective Coulomb disorder-induced localized AI, which may have short-range WC-like correlations at low carrier densities. Our theoretically calculated disorder-driven critical MIT density agrees with experimental findings in all 2D samples, even for the ultra-clean samples. In particular, the extrapolated critical density for the 2D MIT seems to vanish when the high-density mobility goes to infinity, indicating that transport probes a disorder-localized insulating ground state independent of how low the carrier density might be.
arXiv comment15 pages, 6 figures, 3 tables
References in corpus (30)
- Electronic transport in two dimensional graphene
- Metallic behavior and related phenomena in two dimensions
- Possible Metal/Insulator Transition at B=0 in Two Dimensions
- Metal-insulator transition in two-dimensional electron systems
- Signatures of bilayer Wigner crystals in a transition metal dichalcogenide heterostructure
- Observation of Wigner crystal of electrons in a monolayer semiconductor
- Transport in strongly correlated two dimensional electron fluids
- Wigner crystallization and metal-insulator transition of two-dimensional holes in GaAs/AlGaAs at B=0
- Phase Diagram of the Low-Density Two-Dimensional Homogeneous Electron Gas
- 2D Metal-Insulator transition as a percolation transition
- The Observation of Percolation-Induced 2D Metal-Insulator Transition in a Si MOSFET
- Resistivity of dilute 2D electrons in an undoped GaAs heterostructure
- Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions
- Transport and percolation in a low-density high-mobility two-dimensional hole system
- The so-called two dimensional metal-insulator transition
- Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
- The 2D metal-insulator transition as a strong localization induced crossover phenomenon
- Hybrid phase at the quantum melting of the Wigner crystal
- Screening and transport in 2D semiconductor systems at low temperatures
- Two-dimensional metal-insulator-transition as a potential fluctuation driven semiclassical transport phenomenon
- Anisotropic, two-dimensional, disordered Wigner solid
- Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system
- The energy scale behind the metallic behaviors in low-density Si-MOSFETs
- Disorder induced 2D metal-insulator transition in moiré transition metal dichalcogenide multilayers
- Similarities and Differences in 2D `metallicity' induced by temperature and parallel magnetic field: To screen or not to screen
- Signatures of localization in the effective metallic regime of high mobility Si MOSFETs
- Metallic state in a strongly interacting spinless two-valley electron system in two dimensions
- Mobility-Dependence of the Critical Density in Two-Dimensional Systems: An Empirical Relation
- Strongly metallic electron and hole 2D transport in an ambipolar Si-vacuum field effect transistor
- Thermal melting of a quantum electron solid in the presence of strong disorder: Anderson versus Wigner
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